The theory of quantum dot infrared phototransistors,” Semicon

Abstract. A novel device—the quantum-dot infrared phototransistor (QDIP)—is proposed and considered theoretically. The QDIP utilizes intersubband electron transitions from the bound states. The dark current and sensitivity are calculated using a proposed analytical model of the QDIP. It is shown that the QDIP can exhibit low dark current, high photoelectric gain and sensitivity surpassing the characteristics of other intersubband photodetectors. 1